PREDICT-1.6 - MODELING OF METAL SILICIDE PROCESSES

被引:11
作者
OSBURN, CM [1 ]
TSAI, JY [1 ]
WANG, QF [1 ]
ROSE, J [1 ]
COWEN, A [1 ]
机构
[1] N CAROLINA STATE UNIV,DEPT ELECT & COMP ENGN,RALEIGH,NC 27695
关键词
D O I
10.1149/1.2221146
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
A new version of the PREDICT process model has been developed which updates many of the existing models with new data describing metal silicide formation and dopant redistribution. The new program also incorporates several novel features, not previously included as part of a process modeling program: (i) silicide resistivity as formed, after ion implantation, and after agglomeration, (ii) roughening of the silicide/silicon interface, and (iii) profile convolution routines to account for secondary ion mass spectroscopy cascade mixing and silicide roughening. The latter algorithms provide a bridge so that experimental data can be compared to model predictions.
引用
收藏
页码:3660 / 3667
页数:8
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