DOPANT REDISTRIBUTION DURING TITANIUM SILICIDE FORMATION

被引：27

作者：

AMANO, J ^{[1
]}

MERCHANT, P ^{[1
]}

CASS, TR ^{[1
]}

MILLER, JN ^{[1
]}

KOCH, T ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,PALO ALTO,CA 94304

来源：

关键词：

D O I：

10.1063/1.336976

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2689 / 2693

页数：5

共 12 条

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[2] METASTABLE PHASE FORMATION IN TITANIUM-SILICON THIN-FILMS
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SINCLAIR, R
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5240 - 5245
[3] TITANIUM SILICIDE FORMATION ON BF2+-IMPLANTED SILICON
CHOW, TP
KATZ, W
SMITH, G
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (01) : 41 - 43
[4] CRANK J, 1956, MATH DIFFUSION, pCH3
[5] Lau C. K., 1982, International Electron Devices Meeting. Technical Digest, P714
[6] LEW PW, 1983, THESIS STANFORD U, pCH3
[7] OXYGEN REDISTRIBUTION DURING SINTERING OF TI/SI STRUCTURES
MERCHANT, P
AMANO, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04): : 762 - 765
[8] Murarka S. P., 1983, SILICIDES VLSI APPLI
[9] PARK HK, 1984, J VAC SCI TECHNOL A, V2, P264, DOI 10.1116/1.572576
[10] SHIBATA T, 1982, INT ELECTRON DEVICE, P647