ARSENIC OUT-DIFFUSION DURING TISI2 FORMATION

被引：39

作者：

AMANO, J ^{[1
]}

MERCHANT, P ^{[1
]}

KOCH, T ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,CORVALLIS,OR 97330

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 08期

关键词：

D O I：

10.1063/1.94902

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：744 / 746

页数：3

共 10 条

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[9] EFFECTS OF ELECTRICALLY ACTIVE IMPURITIES ON THE EPITAXIAL REGROWTH RATE OF AMORPHIZED SILICON AND GERMANIUM [J].

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[10] REDISTRIBUTION OF IMPLANTED DOPANTS AFTER METAL-SILICIDE FORMATION [J].

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