SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA

[1] SOLID-PHASE EPITAXIAL-GROWTH OF SI THROUGH PALLADIUM SILICIDE LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2831 - 2836

[2] CASS T, UNPUBLISHED

[3] REGROWTH KINETICS OF AMORPHOUS-GE LAYERS CREATED BY GE-74 AND SI-28 IMPLANTATION OF GE CRYSTALS [J]. SOLID STATE COMMUNICATIONS, 1977, 21 (11) : 1019 - 1021

[4] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[5] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158

[6] DEARNALEY G., 1973, ION IMPLANTATION

[7] FOTI G, UNPUBLISHED

[8] PARTICULARITIES OF CRYSTALLINE TO AMORPHOUS STATE CONVERSION IN SILICON HEAVILY DAMAGED BY 140 KEV SI++ IONS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 38 (01): : 139 - 149

[9] HERD SR, 1972, J NONCRYSTAL SOLIDS, V7, P309, DOI DOI 10.1016/0022-3093(72)90267-0

[10] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4241 - 4246

[1] SOLID-PHASE EPITAXIAL-GROWTH OF SI THROUGH PALLADIUM SILICIDE LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2831 - 2836

[2] CASS T, UNPUBLISHED

[3] REGROWTH KINETICS OF AMORPHOUS-GE LAYERS CREATED BY GE-74 AND SI-28 IMPLANTATION OF GE CRYSTALS [J]. SOLID STATE COMMUNICATIONS, 1977, 21 (11) : 1019 - 1021

[4] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[5] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158

[6] DEARNALEY G., 1973, ION IMPLANTATION

[7] FOTI G, UNPUBLISHED

[8] PARTICULARITIES OF CRYSTALLINE TO AMORPHOUS STATE CONVERSION IN SILICON HEAVILY DAMAGED BY 140 KEV SI++ IONS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 38 (01): : 139 - 149

[9] HERD SR, 1972, J NONCRYSTAL SOLIDS, V7, P309, DOI DOI 10.1016/0022-3093(72)90267-0

[10] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4241 - 4246