REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON

[1] INFLUENCE OF AMORPHOUS PHASE ON ION DISTRIBUTIONS AND ANNEALING BEHAVIOR OF GROUP III AND GROUP V IONS IMPLANTED INTO SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) : 943 - &

[2] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158

[3] GERASIMENKO NN, 1974, SOV PHYS SEMICOND+, V7, P1461

[4] STACKING FAULT NUCLEATION IN EPITAXIAL SILICON ON VARIOUSLY ORIENTED SILICON SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (05) : 1570 - &

[5] NISHIZAWA J, 1974, J CRYST GROWTH, V24, P215, DOI 10.1016/0022-0248(74)90306-6

[6] Ziegler J. F., 1974, Atomic Data and Nuclear Data Tables, V13, P463, DOI 10.1016/0092-640X(74)90009-6

[1] INFLUENCE OF AMORPHOUS PHASE ON ION DISTRIBUTIONS AND ANNEALING BEHAVIOR OF GROUP III AND GROUP V IONS IMPLANTED INTO SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) : 943 - &

[2] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158

[3] GERASIMENKO NN, 1974, SOV PHYS SEMICOND+, V7, P1461

[4] STACKING FAULT NUCLEATION IN EPITAXIAL SILICON ON VARIOUSLY ORIENTED SILICON SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (05) : 1570 - &

[5] NISHIZAWA J, 1974, J CRYST GROWTH, V24, P215, DOI 10.1016/0022-0248(74)90306-6

[6] Ziegler J. F., 1974, Atomic Data and Nuclear Data Tables, V13, P463, DOI 10.1016/0092-640X(74)90009-6