INFLUENCE OF AMORPHOUS PHASE ON ION DISTRIBUTIONS AND ANNEALING BEHAVIOR OF GROUP III AND GROUP V IONS IMPLANTED INTO SILICON

被引：98

作者：

CROWDER, BL

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 06期

关键词：

D O I：

10.1149/1.2408229

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：943 / &

共 24 条

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[5]

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[7] ROLE OF DAMAGE IN ANNEALING CHARACTERISTICS OF ION IMPLANTED SI [J].

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[8] ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J].

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APPLIED PHYSICS LETTERS, 1970, 16 (05) :205-&

[9] HIGH-DOSE IMPLANTATIONS OF P, AS, AND SB IN SILICON - A COMPARISON OF ROOM-TEMPERATURE IMPLANTATIONS FOLLOWED BY A 550 DEGREES C ANNEAL AND IMPLANTATIONS CONDUCTED AT 600 DEGREES C [J].

CROWDER, BL ;

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) :363-+

[10] POST ANNEALING CONDUCTANCE BEHAVIOR OF IMPLANTED LAYERS IN SILICON [J].

DAVIES, DE .

APPLIED PHYSICS LETTERS, 1969, 14 (07) :227-&

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