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POST ANNEALING CONDUCTANCE BEHAVIOR OF IMPLANTED LAYERS IN SILICON

被引：36
作者：
DAVIES, DE
机构：
[1] Ion Physics Corporation, Burlington
来源：
APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 07期
关键词：
D O I：
10.1063/1.1652790
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Isochronal annealing studies have been conducted on implanted boron and phosphorus layers in silicon. It is shown that the sheet conductance rise on annealing is dependent on the temperature at which the silicon is maintained during implantation. From the standpoint of conductance, low-temperature implanting is to be favored. © 1969 The American Institute of Physics.
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页码：227 / &
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