ION IMPLANTATION OF SILICON .2. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTS

被引：94

作者：

MAYER, JW

MARSH, OJ

SHIFRIN, GA

BARON, R

机构：

来源：

CANADIAN JOURNAL OF PHYSICS | 1967年 / 45卷 / 12期

关键词：

D O I：

10.1139/p67-340

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：4073 / &

共 17 条

[1]

BUEHLER MG, 1966, SEL66064 STANF RES R

[2] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].

DAVIES, JA ;

DENHARTO.J ;

ERIKSSON, L ;

MAYER, JW .

CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) :4053-&

[3] ANALYSIS OF SB-IMPLANTED SILICON BY (P P) SCATTERING AND HALL MEASUREMENTS [J].

ERIKSSON, L ;

DAVIES, JA ;

DENHARTOG, J ;

MAYER, JW ;

MARSH, OJ ;

MARKARIOUS, R .

APPLIED PHYSICS LETTERS, 1967, 10 (11) :323-+

[4]

ERIKSSON L, 1967, PRIVATE COMMUNICATIO

[5] EFFECT OF IMPURITIES ON ANNEALING BEHAVIOR OF IRRADIATED SILICON [J].

HIRATA, M ;

SAITO, H ;

CRAWFORD, JH .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (06) :2433-&

[6] RECOMBINATION CENTERS IN GAMMA-IRRADIATED SILICON [J].

HIRATA, M ;

SAITO, H .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) :1867-&

[7]

IRWIN JC, 1962, BELL SYST TECH J, V41, P387

[8] SOLUBILITY EFFECTS OF IMPLANTED IONS IN SEMICONDUCTORS [J].

MARSH, OJ ;

MAYER, JW ;

SHIFRIN, GA ;

JAMBA, D .

APPLIED PHYSICS LETTERS, 1967, 11 (03) :92-&

[9] ZN AND TE IMPLANTATIONS INTO GAAS [J].

MAYER, JW ;

MARSH, OJ ;

MANKARIOUS, R ;

BOWER, R .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) :1975-+

[10] ION BEAMS AND SOLID STATE PHYSICS [J].

MCCALDIN, JO .

NUCLEAR INSTRUMENTS & METHODS, 1965, 38 (DEC) :153-&

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