EFFECT OF IMPURITIES ON ANNEALING BEHAVIOR OF IRRADIATED SILICON

被引：50

作者：

HIRATA, M

SAITO, H

CRAWFORD, JH

机构：

来源：

关键词：

D O I：

10.1063/1.1709922

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2433 / &

共 25 条

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