RECOMBINATION CENTERS IN GAMMA-IRRADIATED SILICON

被引：31

作者：

HIRATA, M

SAITO, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1966年 / 37卷 / 04期

关键词：

D O I：

10.1063/1.1708616

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1867 / &

共 16 条

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