RECOMBINATION IN GAMMA-IRRADIATED SILICON

[1] RECOMBINATION AND TRAPPING IN NORMAL AND ELECTRON-IRRADIATED SILICON [J]. PHYSICAL REVIEW, 1963, 129 (03): : 1174 - &

[2] A NEW PARAMAGNETIC CENTER IN ELECTRON IRRADIATED SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (01) : 1 - &

[3] CURTIS OL, 1959, J APPL PHYS, V30, P1174, DOI 10.1063/1.1735288

[4] GALKIN GN, 1961, SOV PHYS-SOL STATE, V2, P1819

[5] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387

[6] INUISHI Y, 1963, J PHYS SOC JAPAN S3, V18, P240

[7] TRAPPING AND RECOMBINATION CENTERS IN PLASTICALLY BENT SILICON [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (05) : 874 - &

[8] SAITO H, 1963, J PHYS SOC JAPAN S3, V18, P246

[9] CARRIER LIFETIME IN SEMICONDUCTORS FOR TRANSIENT CONDITIONS [J]. PHYSICAL REVIEW, 1957, 105 (02): : 524 - 524

[10] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

[1] RECOMBINATION AND TRAPPING IN NORMAL AND ELECTRON-IRRADIATED SILICON [J]. PHYSICAL REVIEW, 1963, 129 (03): : 1174 - &

[2] A NEW PARAMAGNETIC CENTER IN ELECTRON IRRADIATED SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (01) : 1 - &

[3] CURTIS OL, 1959, J APPL PHYS, V30, P1174, DOI 10.1063/1.1735288

[4] GALKIN GN, 1961, SOV PHYS-SOL STATE, V2, P1819

[5] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387

[6] INUISHI Y, 1963, J PHYS SOC JAPAN S3, V18, P240

[7] TRAPPING AND RECOMBINATION CENTERS IN PLASTICALLY BENT SILICON [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (05) : 874 - &

[8] SAITO H, 1963, J PHYS SOC JAPAN S3, V18, P246

[9] CARRIER LIFETIME IN SEMICONDUCTORS FOR TRANSIENT CONDITIONS [J]. PHYSICAL REVIEW, 1957, 105 (02): : 524 - 524

[10] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842