EFFECT OF IMPURITIES ON ANNEALING BEHAVIOR OF IRRADIATED SILICON

[21] WATKINS GD, 1965, PHYS REV, V138, pA555

[22] WATKINS GD, 1964, 1964 P S RAD DAM SEM

[23] ELECTRON-BOMBARDMENT DAMAGE IN OXYGEN-FREE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1232 - 1234

[24] NEUTRON-BOMBARDMENT DAMAGE IN SILICON [J]. PHYSICAL REVIEW, 1958, 111 (06): : 1500 - 1505

[25] ELECTRON-BOMBARDMENT DAMAGE IN SILICON [J]. PHYSICAL REVIEW, 1958, 110 (06): : 1272 - 1279

[21] WATKINS GD, 1965, PHYS REV, V138, pA555

[22] WATKINS GD, 1964, 1964 P S RAD DAM SEM

[23] ELECTRON-BOMBARDMENT DAMAGE IN OXYGEN-FREE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1232 - 1234

[24] NEUTRON-BOMBARDMENT DAMAGE IN SILICON [J]. PHYSICAL REVIEW, 1958, 111 (06): : 1500 - 1505

[25] ELECTRON-BOMBARDMENT DAMAGE IN SILICON [J]. PHYSICAL REVIEW, 1958, 110 (06): : 1272 - 1279