ELECTRON-BOMBARDMENT DAMAGE IN OXYGEN-FREE SILICON

被引：53

作者：

WERTHEIM, GK

BUCHANAN, DNE

机构：

来源：

关键词：

D O I：

10.1063/1.1735298

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1232 / 1234

页数：3

共 9 条

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