SPIN RESONANCE IN ELECTRON IRRADIATED SILICON

被引：210

作者：

WATKINS, GD

CORBETT, JW

WALKER, RM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1959年 / 30卷 / 08期

关键词：

D O I：

10.1063/1.1735293

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1198 / 1203

页数：6

共 15 条

[1] ANNEALING OF ELECTRON BOMBARDMENT DAMAGE IN SILICON CRYSTALS [J].

BEMSKI, G ;

AUGUSTYNIAK, WM .

PHYSICAL REVIEW, 1957, 108 (03) :645-648

[2] PARAMAGNETIC RESONANCE IN ELECTRON IRRADIATED SILICON [J].

BEMSKI, G .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1195-1198

[3]

BEMSKI G, 1958, B AM PHYS SOC, V3, P135

[4] ENERGY, ORIENTATION, AND TEMPERATURE DEPENDENCE OF DEFECT FORMATION IN ELECTRON IRRADIATION OF N-TYPE GERMANIUM [J].

BROWN, WL ;

AUGUSTYNIAK, WM .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1300-1309

[5] SENSITIVITY CONSIDERATIONS IN MICROWAVE PARAMAGNETIC RESONANCE ABSORPTION TECHNIQUES [J].

FEHER, G .

BELL SYSTEM TECHNICAL JOURNAL, 1957, 36 (02) :449-484

[6] DONOR WAVEFUNCTIONS IN SILICON BY THE ENDOR TECHNIQUE [J].

FEHER, G .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :486-489

[7]

HILL DE, 1959, THESIS PURDUE U

[8] INFRARED ABSORPTION OF OXYGEN IN SILICON [J].

HROSTOWSKI, HJ ;

KAISER, RH .

PHYSICAL REVIEW, 1957, 107 (04) :966-972

[9]

KAISER, 1956, PHYS REV, V101, P1264

[10]

NISENOFF M, 1959, B AM PHYS SOC, V4, P159

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