DONOR WAVEFUNCTIONS IN SILICON BY THE ENDOR TECHNIQUE

被引：21

作者：

FEHER, G

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(59)90396-8

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：486 / 489

页数：4

共 9 条

[1] OBSERVATION OF NUCLEAR MAGNETIC RESONANCES VIA THE ELECTRON SPIN RESONANCE LINE
FEHER, G
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[2] FEHER G, UNPUBLISHED
[3] FLETCHER, 1954, PHYS REV, V95, P844
[4] SPIN RESONANCE OF DONORS IN SILICON
FLETCHER, RC
YAGER, WA
PEARSON, GL
HOLDEN, AN
READ, WT
MERRITT, FR
[J]. PHYSICAL REVIEW, 1954, 94 (05): : 1392 - 1393
[5] HAYNES JR, 1958, B AM PHYS SOC 2, V3, P31
[6] THEORY OF DONOR LEVELS IN SILICON
KOHN, W
[J]. PHYSICAL REVIEW, 1955, 97 (06): : 1721 - 1721
[7] THEORY OF DONOR STATES IN SILICON
KOHN, W
LUTTINGER, JM
[J]. PHYSICAL REVIEW, 1955, 98 (04): : 915 - 922
[8] ELECTRONIC STRUCTURE OF F-CENTERS - SATURATION OF THE ELECTRON SPIN RESONANCE
PORTIS, AM
[J]. PHYSICAL REVIEW, 1953, 91 (05): : 1071 - 1078
[9] SCHECHTER D, COMMUNICATION