ENERGY, ORIENTATION, AND TEMPERATURE DEPENDENCE OF DEFECT FORMATION IN ELECTRON IRRADIATION OF N-TYPE GERMANIUM

被引：181

作者：

BROWN, WL

AUGUSTYNIAK, WM

机构：

来源：

关键词：

D O I：

10.1063/1.1735309

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1300 / 1309

页数：10

共 19 条

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[2]

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[3] ANNEALING OF RADIATION DEFECTS IN SEMICONDUCTORS [J].

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AUGUSTYNIAK, WM ;

WAITE, TR .

[4]

BROWN WL, 1957, B AM PHYS SOC 2, V2, P156

[5]

CLELAND, 1956, PHYS REV, V102, P722

[6] FAST-NEUTRON BOMBARDMENT OF N-TYPE GE [J].

CLELAND, JW ;

CRAWFORD, JH ;

PIGG, JC .

PHYSICAL REVIEW, 1955, 98 (06) :1742-1750

[7]

CRAWFORD JH, 1958, REPORT BRUSSELS C

[8]

FAN HY, 1956, P INT C SEMI CONDUCT

[9]

KLONTZ EE, 1952, PHYS REV, V86, P643

[10]

KLONTZ EE, 1952, THESIS PURDUE U