ANNEALING OF RADIATION DEFECTS IN SEMICONDUCTORS

被引：116

作者：

BROWN, WL

AUGUSTYNIAK, WM

WAITE, TR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1959年 / 30卷 / 08期

关键词：

D O I：

10.1063/1.1735303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1258 / 1268

页数：11

共 31 条

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[3]

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[6]

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[8] FAST NEUTRON BOMBARDMENT OF RHO-TYPE GERMANIUM [J].

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[9]

CONWELL EM, 1952, P IRE, V40, P1331

[10] DISCRETE RECOVERY SPECTRUM BELOW 65-DEGREES K IN IRRADIATED COPPER [J].

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