NEUTRON-BOMBARDMENT DAMAGE IN SILICON

[1] [Anonymous], COMMUNICATION

[2] BECKER, 1952, PHYS REV, V85, P730

[3] BEMSKI, 1958, B AM PHYS SOC 2, V3, P135

[4] ANNEALING OF ELECTRON BOMBARDMENT DAMAGE IN SILICON CRYSTALS [J]. PHYSICAL REVIEW, 1957, 108 (03): : 645 - 648

[5] CLELAND, 1956, PHYS REV, V102, P722

[6] FAST-NEUTRON BOMBARDMENT OF N-TYPE GE [J]. PHYSICAL REVIEW, 1955, 98 (06): : 1742 - 1750

[7] FAST NEUTRON BOMBARDMENT OF RHO-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1170 - 1181

[8] DREYFUS R, 1953, THESIS PURDUE U

[9] LONGO TA, 1957, THESIS PURDUE U

[10] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35

[1] [Anonymous], COMMUNICATION

[2] BECKER, 1952, PHYS REV, V85, P730

[3] BEMSKI, 1958, B AM PHYS SOC 2, V3, P135

[4] ANNEALING OF ELECTRON BOMBARDMENT DAMAGE IN SILICON CRYSTALS [J]. PHYSICAL REVIEW, 1957, 108 (03): : 645 - 648

[5] CLELAND, 1956, PHYS REV, V102, P722

[6] FAST-NEUTRON BOMBARDMENT OF N-TYPE GE [J]. PHYSICAL REVIEW, 1955, 98 (06): : 1742 - 1750

[7] FAST NEUTRON BOMBARDMENT OF RHO-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1170 - 1181

[8] DREYFUS R, 1953, THESIS PURDUE U

[9] LONGO TA, 1957, THESIS PURDUE U

[10] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J]. PHYSICAL REVIEW, 1954, 96 (01): : 28 - 35