ELECTRON-BOMBARDMENT DAMAGE IN SILICON

[1] ANNEALING OF ELECTRON BOMBARDMENT DAMAGE IN SILICON CRYSTALS [J]. PHYSICAL REVIEW, 1957, 108 (03): : 645 - 648

[2] BLEWITT, 1957, J APPL PHYS, V28, P639

[3] BROWN WL, 1957, B AM PHYS SOC 2, V2, P156

[4] CLARKE DH, 1957, J ELECTRON CONTR, V3, P375

[5] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1950, 77 (03): : 388 - 390

[6] CONWELL EM, 1952, P IRE, V40, P1331

[7] GOBELI GW, 1957, B AM PHYS SOC 2, V2, P355

[8] HILL DE, 1956, BULL AM PHYS SOC, V1, P321

[9] KOHN W, 1954, PHYS REV, V94, P1409

[10] ELECTRON VOLTAIC STUDY OF ELECTRON BOMBARDMENT DAMAGE AND ITS THRESHOLDS IN GE AND SI [J]. PHYSICAL REVIEW, 1955, 98 (06): : 1861 - 1863

[1] ANNEALING OF ELECTRON BOMBARDMENT DAMAGE IN SILICON CRYSTALS [J]. PHYSICAL REVIEW, 1957, 108 (03): : 645 - 648

[2] BLEWITT, 1957, J APPL PHYS, V28, P639

[3] BROWN WL, 1957, B AM PHYS SOC 2, V2, P156

[4] CLARKE DH, 1957, J ELECTRON CONTR, V3, P375

[5] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1950, 77 (03): : 388 - 390

[6] CONWELL EM, 1952, P IRE, V40, P1331

[7] GOBELI GW, 1957, B AM PHYS SOC 2, V2, P355

[8] HILL DE, 1956, BULL AM PHYS SOC, V1, P321

[9] KOHN W, 1954, PHYS REV, V94, P1409

[10] ELECTRON VOLTAIC STUDY OF ELECTRON BOMBARDMENT DAMAGE AND ITS THRESHOLDS IN GE AND SI [J]. PHYSICAL REVIEW, 1955, 98 (06): : 1861 - 1863