ZN AND TE IMPLANTATIONS INTO GAAS

[1] DEEP (1-10 MU) PENETRATION OF ION-IMPLANTED DONORS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1966, 9 (05) : 203 - &

[2] DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) : 3024 - &

[3] RANGE OF ENERGETIC XE125 IONS IN MONOCRYSTALLINE SILICON [J]. CANADIAN JOURNAL OF PHYSICS, 1964, 42 (06) : 1070 - &

[4] ANOMALOUS PENETRATION OF XENON IN TUNGSTEN CRYSTALS-A DIFFUSION EFFECT [J]. CANADIAN JOURNAL OF PHYSICS, 1966, 44 (07) : 1631 - +

[5] DOPING OF SEMICONDUCTORS BY ION BOMBARDMENT [J]. NUCLEAR INSTRUMENTS & METHODS, 1965, 38 (DEC): : 165 - &

[6] KELLETT CM, AFCRL66367 ION PHYS

[7] PENETRATION OF HEAVY IONS OF KEV ENERGIES INTO MONOCRYSTALLINE TUNGSTEN [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 136 (3A): : A849 - &

[8] MARSH OJ, TO BE PUBLISHED

[9] ALKALI ION DOPING OF SILICON [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (03) : 301 - &

[10] MCCALDIN JO, 1965, PROGRESS SOLIDSTATE, V2

[1] DEEP (1-10 MU) PENETRATION OF ION-IMPLANTED DONORS IN SILICON [J]. APPLIED PHYSICS LETTERS, 1966, 9 (05) : 203 - &

[2] DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) : 3024 - &

[3] RANGE OF ENERGETIC XE125 IONS IN MONOCRYSTALLINE SILICON [J]. CANADIAN JOURNAL OF PHYSICS, 1964, 42 (06) : 1070 - &

[4] ANOMALOUS PENETRATION OF XENON IN TUNGSTEN CRYSTALS-A DIFFUSION EFFECT [J]. CANADIAN JOURNAL OF PHYSICS, 1966, 44 (07) : 1631 - +

[5] DOPING OF SEMICONDUCTORS BY ION BOMBARDMENT [J]. NUCLEAR INSTRUMENTS & METHODS, 1965, 38 (DEC): : 165 - &

[6] KELLETT CM, AFCRL66367 ION PHYS

[7] PENETRATION OF HEAVY IONS OF KEV ENERGIES INTO MONOCRYSTALLINE TUNGSTEN [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 136 (3A): : A849 - &

[8] MARSH OJ, TO BE PUBLISHED

[9] ALKALI ION DOPING OF SILICON [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (03) : 301 - &

[10] MCCALDIN JO, 1965, PROGRESS SOLIDSTATE, V2