ZN AND TE IMPLANTATIONS INTO GAAS

[11] REISS H, 1965, PROGRESS SOLIDSTA ED, V2

[12] IMPURITY DISTRIBUTION IN EPITAXIAL SILICON FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1055 - 1061

[13] CHARACTERISTICS OF SILICON P-N JUNCTIONS FORMED BY SODIUM AND CESIUM ION BOMBARDMENT [J]. SOLID-STATE ELECTRONICS, 1964, 7 (12) : 925 - 931

[14] 1965, NUCL INSTR METHODS, V38, P153

[11] REISS H, 1965, PROGRESS SOLIDSTA ED, V2

[12] IMPURITY DISTRIBUTION IN EPITAXIAL SILICON FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1055 - 1061

[13] CHARACTERISTICS OF SILICON P-N JUNCTIONS FORMED BY SODIUM AND CESIUM ION BOMBARDMENT [J]. SOLID-STATE ELECTRONICS, 1964, 7 (12) : 925 - 931

[14] 1965, NUCL INSTR METHODS, V38, P153