CHARACTERISTICS OF SILICON P-N JUNCTIONS FORMED BY SODIUM AND CESIUM ION BOMBARDMENT

被引：7

作者：

WALDNER, M

MCQUAID, PE

机构：

来源：

SOLID-STATE ELECTRONICS | 1964年 / 7卷 / 12期

关键词：

D O I：

10.1016/0038-1101(64)90071-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：925 / 931

页数：7

共 13 条

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[9] PROPERTIES OF SILICON P-N JUNCTIONS FORMED BY CS+ IMPLANTATION AT LOW ENERGIES [J].

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[10] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

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