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ION IMPLANTATION OF SILICON .2. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTS

被引：94
作者：
MAYER, JW
MARSH, OJ
SHIFRIN, GA
BARON, R
机构：
来源：
CANADIAN JOURNAL OF PHYSICS | 1967年 / 45卷 / 12期
关键词：
D O I：
10.1139/p67-340
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：4073 / &
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