MASS ANALYSIS OF ION BEAMS FROM A LOW-VOLTAGE SPARK ION SOURCE FOR ION-IMPLANTATION DOPING OF SEMICONDUCTORS

被引：7

作者：

WILSON, RG

JAMBA, DM

机构：

来源：

关键词：

D O I：

10.1063/1.1709795

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1976 / &

共 8 条

[1] DEEP (1-10 MU) PENETRATION OF ION-IMPLANTED DONORS IN SILICON [J].

BOWER, RW ;

BARON, R ;

MAYER, JW ;

MARSH, OJ .

[2] Ion sources for mass spectroscopy [J].

Dempster, AJ .

[3]

FABRY, 1900, COMPTES RENDUS, V130, P406

[4]

MARSH OJ, PRIVATE COMMUNICATIO

[5]

MARSH OJ, TO BE PUBLISHED

[6] ZN AND TE IMPLANTATIONS INTO GAAS [J].

MAYER, JW ;

MARSH, OJ ;

MANKARIOUS, R ;

BOWER, R .

[7]

SULADZE KV, 1966, SOV PHYS TECH PHYS-U, V10, P1006

[8] VACUUM VIBRATOR AS A SOURCE OF IONS FOR MASS SPECTROSCOPY [J].

VENKATASUBRAMAN.VS ;

DUCKWORTH, HE .