ANNEALING BEHAVIOUR OF P-TYPE LAYERS FORMED BY ION-IMPLANTATION OF GALLIUM IN SILICON

被引：3

作者：

BULTHUIS, K

TREE, R

机构：

[1] Mullard Research Laboratories, Redhill, Surrey

来源：

PHYSICS LETTERS A | 1969年 / A 28卷 / 08期

关键词：

D O I：

10.1016/0375-9601(69)90105-4

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The number of charge carriers in gallium implanted as a function of annealing temperature is related to the formation of neutral complexes. Corresponding differences in penetration depth of gallium atoms are noted. © 1969.

引用

页码：558 / &

共 5 条

[1] ANOMALOUS PENETRATION OF GA AND IN IMPLANTED IN SILICON
BULTHUIS, K
[J]. PHYSICS LETTERS A, 1968, A 27 (04) : 193 - &
[2] Eriksson L., 1968, Proceedings of the Santa Fe conference on radiation effects in semiconductors, P398
[3] FREEMAN JH, 1967, P INT C APPL ION BEA, P75
[4] INFLUENCE OF TEMPERATURE AND CHANNELING ON ION-BOMBARDMENT DAMAGE IN SI
NELSON, RS
MAZEY, DJ
[J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 689 - &
[5] WATKINS GD, 1964, RAD DAMAGE SEMICONDU, P00097

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