ROLE OF DAMAGE IN ANNEALING CHARACTERISTICS OF ION IMPLANTED SI

被引：26

作者：

CROWDER, BL

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1970年 / 117卷 / 05期

关键词：

D O I：

10.1149/1.2407601

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：671 / &

共 15 条

[1] ELECTRICAL BEHAVIOR OF GROUP-3 AND GROUP-V IMPLANTED DOPANTS IN SILICON [J].

BARON, R ;

SHIFRIN, GA ;

MARSH, OJ ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3702-&

[2]

CORWDER BL, 1970, APPL PHYS LETTERS, P16

[3] ANNEALING CHARACTERISTICS OF N-TYPE DOPANTS IN ION-IMPLANTED SILICON [J].

CROWDER, BL ;

MOREHEAD, FF .

APPLIED PHYSICS LETTERS, 1969, 14 (10) :313-&

[4] HIGH-DOSE IMPLANTATIONS OF P, AS, AND SB IN SILICON - A COMPARISON OF ROOM-TEMPERATURE IMPLANTATIONS FOLLOWED BY A 550 DEGREES C ANNEAL AND IMPLANTATIONS CONDUCTED AT 600 DEGREES C [J].

CROWDER, BL ;

FAIRFIELD, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) :363-+

[5]

CROWDER BL, TO BE PUBLISHED

[6]

DAVIES E, 1969, APPL PHYS LETTERS, V14, P227

[7] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].

DAVIES, JA ;

DENHARTO.J ;

ERIKSSON, L ;

MAYER, JW .

CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) :4053-&

[8]

FAIRFIELD JM, 1969, T METALL SOC AIME, V245, P469

[9] ELECTRICAL AND PHYSICAL MEASUREMENTS ON SILICON IMPLANTED WITH CHANNELED AND NONCHANNELED DOPANT IONS [J].

GIBSON, WM ;

MARTIN, FW ;

STENSGAARD, R ;

JENSEN, FP ;

MEYER, NI ;

GALSTER, G ;

JOHANSEN, A ;

OLSEN, JS .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :675-+

[10] RADIOTRACER STUDIES OF ION IMPLANTED PROFILE BUILD-UP IN SILICON SUBTRATES [J].

MANCHESTER, KE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (06) :656-+

← 1 2 →