RADIOTRACER STUDIES OF ION IMPLANTED PROFILE BUILD-UP IN SILICON SUBTRATES

[1] BUSEN KM, 1966, T METALL SOC AIME, V236, P306

[2] Ion-Implantation Doping of Semiconductors [J]. JOURNAL OF MATERIALS SCIENCE, 1967, 2 (06) : 589 - 609

[3] LINDHARD J, 1963, KGL KANSKE VIDENSKAB, V33

[4] DOPING OF SILICON BY ION IMPLANTATION [J]. NUCLEAR INSTRUMENTS & METHODS, 1965, 38 (DEC): : 169 - &

[5] MANCHESTER KE, 1966, T METALL SOC AIME, V236, P379

[6] MANCHESTER KE, 1966, SEMICOND PROD SOLID, V9, P48

[7] MANCHESTER KE, 1966, 2 P INT EL ION BEAM

[1] BUSEN KM, 1966, T METALL SOC AIME, V236, P306

[2] Ion-Implantation Doping of Semiconductors [J]. JOURNAL OF MATERIALS SCIENCE, 1967, 2 (06) : 589 - 609

[3] LINDHARD J, 1963, KGL KANSKE VIDENSKAB, V33

[4] DOPING OF SILICON BY ION IMPLANTATION [J]. NUCLEAR INSTRUMENTS & METHODS, 1965, 38 (DEC): : 169 - &

[5] MANCHESTER KE, 1966, T METALL SOC AIME, V236, P379

[6] MANCHESTER KE, 1966, SEMICOND PROD SOLID, V9, P48

[7] MANCHESTER KE, 1966, 2 P INT EL ION BEAM