CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI

被引:192
作者
CSEPREGI, L
MAYER, JW
SIGMON, TW
机构
[1] CALTECH,PASADENA,CA 91125
[2] HEWLETT PACKARD LABS,PALO ALTO,CA 94304
关键词
D O I
10.1016/0375-9601(75)90847-6
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:157 / 158
页数:2
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