RELATIONS BETWEEN STRUCTURE AND OPTICAL AND ELECTRICAL PROPERTIES OF AMORPHOUS SI AND GE FILMS

[1] EFFECT OF DEPOSITION PARAMETERS ON CRYSTALLINITY OF EVAPORATED GERMANIUM FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4301 - &

[2] EFFECT OF OXYGEN ON FORMATION OF GERMANIUM FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 542 - &

[3] AGARWAL SC, 1970, B AM PHYS SOC, V15, P244

[4] BANYAI L, 1965, PHYSICS SEMICONDUCTO, P417

[5] BARNA A, 1965, P COLLOQ THIN FILMS, P19

[6] Beaglehole D., 1970, Journal of Non-Crystalline Solids, V4, P272, DOI 10.1016/0022-3093(70)90051-7

[7] BEER AC, 1963, GALVANOMAGNETIC EFFE, pCH10

[8] Bonch-Bruevich V. L., 1970, Journal of Non-Crystalline Solids, V4, P410, DOI 10.1016/0022-3093(70)90069-4

[9] ELECTRONIC DIELECTRIC CONSTANT OF AMORPHOUS SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1970, 25 (12) : 798 - &

[10] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J]. PHYSICAL REVIEW LETTERS, 1969, 23 (11) : 581 - &

[1] EFFECT OF DEPOSITION PARAMETERS ON CRYSTALLINITY OF EVAPORATED GERMANIUM FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) : 4301 - &

[2] EFFECT OF OXYGEN ON FORMATION OF GERMANIUM FILMS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04): : 542 - &

[3] AGARWAL SC, 1970, B AM PHYS SOC, V15, P244

[4] BANYAI L, 1965, PHYSICS SEMICONDUCTO, P417

[5] BARNA A, 1965, P COLLOQ THIN FILMS, P19

[6] Beaglehole D., 1970, Journal of Non-Crystalline Solids, V4, P272, DOI 10.1016/0022-3093(70)90051-7

[7] BEER AC, 1963, GALVANOMAGNETIC EFFE, pCH10

[8] Bonch-Bruevich V. L., 1970, Journal of Non-Crystalline Solids, V4, P410, DOI 10.1016/0022-3093(70)90069-4

[9] ELECTRONIC DIELECTRIC CONSTANT OF AMORPHOUS SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1970, 25 (12) : 798 - &

[10] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J]. PHYSICAL REVIEW LETTERS, 1969, 23 (11) : 581 - &