ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE

被引：377

作者：

BRODSKY, MH

TITLE, RS

机构：

[1] IBM Research Division, Yorktown Heights

来源：

PHYSICAL REVIEW LETTERS | 1969年 / 23卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.23.581

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The g values, line shapes, and linewidths of the ESR signals from within the bulk of amorphous silicon, germanium, and silicon carbide are found to be similar to those of the electron states observed in the surface regions of the corresponding crystalline forms. Discussion is given in terms of a microcrystalline model. © 1969 The American Physical Society.

引用

页码：581 / &

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