EVIDENCE FOR A SHARP ABSORPTION EDGE IN AMORPHOUS GE

被引:86
作者
DONOVAN, TM
SPICER, WE
BENNETT, JM
机构
[1] Stanford University, Stanford
[2] Michelson Laboratory, China Lake
关键词
D O I
10.1103/PhysRevLett.22.1058
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A sharp optical absorption edge has been found at about 0.5 eV for amorphous Ge on a quartz substrate. The edge is comparable in sharpness with the direct edge of crystalline Ge. No evidence for tailing of the band edges into the forbidden band or for a high density of states in the forbidden band is found by these optical measurements. A new density determination gives a value of 4.54± 0.14 g/cm3. © 1969 The American Physical Society.
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页码:1058 / &
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