EVIDENCE FOR A SHARP ABSORPTION EDGE IN AMORPHOUS GE

被引：86

作者：

DONOVAN, TM

SPICER, WE

BENNETT, JM

机构：

[1] Stanford University, Stanford

[2] Michelson Laboratory, China Lake

来源：

PHYSICAL REVIEW LETTERS | 1969年 / 22卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.22.1058

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A sharp optical absorption edge has been found at about 0.5 eV for amorphous Ge on a quartz substrate. The edge is comparable in sharpness with the direct edge of crystalline Ge. No evidence for tailing of the band edges into the forbidden band or for a high density of states in the forbidden band is found by these optical measurements. A new density determination gives a value of 4.54± 0.14 g/cm3. © 1969 The American Physical Society.

引用

页码：1058 / &