STACKING FAULT NUCLEATION IN EPITAXIAL SILICON ON VARIOUSLY ORIENTED SILICON SUBSTRATES

被引：101

作者：

MENDELSON, S

机构：

来源：

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D O I：

10.1063/1.1713669

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1570 / &

共 37 条

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[2] AMELINCKX S, 1958, NUOVO CIMENTO, V2, P569
[3] ARIZUMI T, 1963, JPN J APPL PHYS, V2, P143
[4] BASSETT GA, 1958, J I MET, V87, P449
[5] ORIGIN OF STACKING FAULT IN EPITAXIALLY GROWN SILICON
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STICKLER, R
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[6] VACUUM EVAPORATED SILICON LAYERS FREE FROM STACKING FAULTS
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UNVALA, BA
[J]. PHILOSOPHICAL MAGAZINE, 1963, 8 (93): : 1597 - &
[7] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON
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STICKLER, R
[J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3281 - &
[8] BOOKER GR, 1963, ELECTRON MICROSOPE C
[9] GROWTH MECHANISM AND DEFECT STRUCTURES IN EPITAXIAL SILICON
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[J]. PHILOSOPHICAL MAGAZINE, 1962, 7 (83): : 1847 - &
[10] STACKING FAULTS IN VAPOR GROWN SILICON
CHU, TL
GAVALER, JR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 388 - 393