ORIGIN OF STACKING FAULT IN EPITAXIALLY GROWN SILICON

被引：22

作者：

BOOKER, GR

STICKLER, R

机构：

来源：

关键词：

D O I：

10.1063/1.1753912

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：158 / 160

页数：3

共 8 条

BOOKER, GR ;

HOWIE, A .

[2] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J].

BOOKER, GR ;

STICKLER, R .

[3]

BOOKER GR, PHIL MAG

[4]

BOOKER GR, 1963, JUL EL MICR C I PHYS

[5] STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON [J].

FINCH, RH ;

QUEISSER, HJ ;

WASHBURN, J ;

THOMAS, G .

HASHIMOTO, H ;

HOWIE, A ;

WHELAN, MJ .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1962, 269 (1336) :80-&

[7] STACKING FAULTS IN EPITAXIAL MATERIAL [J].

JACCODINE, RJ .

[8]

SILCOX J, 1959, PHILOS MAG, V4, P1556