ORIGIN OF STACKING FAULT IN EPITAXIALLY GROWN SILICON

被引:22
作者
BOOKER, GR
STICKLER, R
机构
关键词
D O I
10.1063/1.1753912
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:158 / 160
页数:3
相关论文
共 8 条
[1]   INTRINSIC-EXTRINSIC STACKING-FAULT PAIRS IN EPITAXIALLY GROWN SILICON LAYERS [J].
BOOKER, GR ;
HOWIE, A .
APPLIED PHYSICS LETTERS, 1963, 3 (09) :156-157
[2]   CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J].
BOOKER, GR ;
STICKLER, R .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) :3281-&
[3]  
BOOKER GR, PHIL MAG
[4]  
BOOKER GR, 1963, JUL EL MICR C I PHYS
[5]   STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON [J].
FINCH, RH ;
QUEISSER, HJ ;
WASHBURN, J ;
THOMAS, G .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :406-&
[6]   ANOMALOUS ELECTRON ABSORPTION EFFECTS IN METAL FOILS - THEORY AND COMPARISON WITH EXPERIMENT [J].
HASHIMOTO, H ;
HOWIE, A ;
WHELAN, MJ .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1962, 269 (1336) :80-&
[7]   STACKING FAULTS IN EPITAXIAL MATERIAL [J].
JACCODINE, RJ .
APPLIED PHYSICS LETTERS, 1963, 2 (11) :201-202
[8]  
SILCOX J, 1959, PHILOS MAG, V4, P1556