STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON

被引：120

作者：

FINCH, RH

QUEISSER, HJ

WASHBURN, J

THOMAS, G

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1963年 / 34卷 / 02期

关键词：

D O I：

10.1063/1.1702622

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：406 / &

共 22 条

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[4]

HAASE O, TO BE PUBLISHED

[5] A KINEMATICAL THEORY OF DIFFRACTION CONTRAST OF ELECTRON TRANSMISSION MICROSCOPE IMAGES OF DISLOCATIONS AND OTHER DEFECTS [J].

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[6] DIRECT MEASUREMENTS OF STACKING-FAULT ENERGIES FROM OBSERVATIONS OF DISLOCATION NODES [J].

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[7]

JACCODINE RJ, PRIVATE COMMUNICATIO

[8]

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[9]

LIGHT TB, TO BE PUBLISHED

[10] ELECTRON MICROSCOPY OF PRISMATIC DISLOCATIONS IN SILICON [J].

PHILLIPS, VA ;

DASH, WC .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (02) :568-&

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