INTRINSIC-EXTRINSIC STACKING-FAULT PAIRS IN EPITAXIALLY GROWN SILICON LAYERS

被引：14

作者：

BOOKER, GR

HOWIE, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1963年 / 3卷 / 09期

关键词：

D O I：

10.1063/1.1753911

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：156 / 157

页数：2

共 8 条

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BRITISH JOURNAL OF APPLIED PHYSICS, 1962, 13 (09) :446-&

[3]

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[4] STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON [J].

FINCH, RH ;

QUEISSER, HJ ;

WASHBURN, J ;

THOMAS, G .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :406-&

[5]

HALE AP, 1963, VACUUM MAR, P93

[6] ANOMALOUS ELECTRON ABSORPTION EFFECTS IN METAL FOILS - THEORY AND COMPARISON WITH EXPERIMENT [J].

HASHIMOTO, H ;

HOWIE, A ;

WHELAN, MJ .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1962, 269 (1336) :80-&

[7]

Unvala B. A., 1963, VIDE, P109

[8] EXTRINSIC-INTRINSIC STACKING-FAULT PAIRS IN EPITAXIAL SILICON [J].

WASHBURN, J ;

THOMAS, G ;

QUEISSER, HJ .

APPLIED PHYSICS LETTERS, 1963, 3 (03) :44-44

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