STACKING FAULTS IN EPITAXIAL MATERIAL

被引：19

作者：

JACCODINE, RJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1963年 / 2卷 / 11期

关键词：

D O I：

10.1063/1.1753733

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：201 / 202

页数：2

共 10 条

[1] STACKING FAULT ENERGY IN SILICON [J].

AERTS, E ;

SIEMS, R ;

DELAVIGNETTE, P ;

AMELINCKX, S .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (10) :3078-&

[2]

BASSETT G, 1962, AIME PHILADELPHIA M

[3]

BASSETT GA, 1959, J I MET, V87, P449

[4] CRYSTALLOGRAPHIC IMPERFECTIONS IN EPITAXIALLY GROWN SILICON [J].

BOOKER, GR ;

STICKLER, R .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) :3281-&

[5] STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON [J].

FINCH, RH ;

QUEISSER, HJ ;

WASHBURN, J ;

THOMAS, G .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :406-&

[6] DISLOCATIONS IN THE DIAMOND LATTICE [J].

HORNSTRA, J .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (1-2) :129-141

[7] ON THE ORIGIN OF DISLOCATIONS [J].

KUHLMANNWILSDORF, D .

PHILOSOPHICAL MAGAZINE, 1958, 3 (26) :125-139

[8]

SCHWUTTKE G, 1962, MAY EL SOC M LOS ANG

[9] DIRECT OBSERVATIONS OF DEFECTS IN QUENCHED GOLD [J].

SILCOX, J ;

HIRSCH, PB .

PHILOSOPHICAL MAGAZINE, 1959, 4 (37) :72-89

[10] DISLOCATION NODES IN FACE-CENTRED CUBIC LATTICES [J].

THOMPSON, N .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1953, 66 (402) :481-492

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