STACKING FAULTS IN VAPOR GROWN SILICON

被引：30

作者：

CHU, TL

GAVALER, JR

机构：

来源：

关键词：

D O I：

10.1149/1.2425771

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：388 / 393

页数：6

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[1]

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[2]

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[3]

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[5]

LIGHT TB, 1962, METALLURGY SEMICONDU, V15, P137

[6] STACKING FAULTS IN EPITAXIAL SILICON [J].

QUEISSER, HJ ;

FINCH, RH ;

WASHBURN, J .

[7]

READ WT, 1953, DISLOCATIONS CRYSTAL, P92

SCHWUTTKE, GH .

[9]

SCHWUTTKE GH, 1962, ELECTROCHEM SOC, V11, P186

[10] EPITAXIAL SILICON FILMS BY THE HYDROGEN REDUCTION OF SIC1 [J].

THEUERER, HC .