GROWTH MECHANISM AND DEFECT STRUCTURES IN EPITAXIAL SILICON

[1] BASSETT GA, 1959 P INT C STRUCT, P11

[2] BASSETT GA, 1960 P EUR C EL MICR, P270

[3] BOOKER GR, 1961, 19 ANN PITTSB DIFFR

[4] STUDY OF BACKGROUND STRUCTURE IN PLATINUM CARBON SHADOWING DEPOSITS [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1960, 11 (11): : 506 - 509

[5] EPITAXIAL GROWTH OF SILICON BY HYDROGEN REDUCTION OF SIHCL3 ONTO SILICON SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (10) : 957 - 962

[6] FINCH RH, TO BE PUBLISHED

[7] HAASE O, 1961, AIME C METALLURGY SE

[8] DISLOCATIONS IN THE DIAMOND LATTICE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (1-2) : 129 - 141

[9] LIGHT TB, 1961, AIME C METALLURGY SE

[10] ORIENTED CHEMICAL GROWTH ON SINGLE CRYSTALS OF ZINC AND CADMIUM [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1952, 215 (1121): : 162 - &

[1] BASSETT GA, 1959 P INT C STRUCT, P11

[2] BASSETT GA, 1960 P EUR C EL MICR, P270

[3] BOOKER GR, 1961, 19 ANN PITTSB DIFFR

[4] STUDY OF BACKGROUND STRUCTURE IN PLATINUM CARBON SHADOWING DEPOSITS [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1960, 11 (11): : 506 - 509

[5] EPITAXIAL GROWTH OF SILICON BY HYDROGEN REDUCTION OF SIHCL3 ONTO SILICON SUBSTRATES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (10) : 957 - 962

[6] FINCH RH, TO BE PUBLISHED

[7] HAASE O, 1961, AIME C METALLURGY SE

[8] DISLOCATIONS IN THE DIAMOND LATTICE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (1-2) : 129 - 141

[9] LIGHT TB, 1961, AIME C METALLURGY SE

[10] ORIENTED CHEMICAL GROWTH ON SINGLE CRYSTALS OF ZINC AND CADMIUM [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1952, 215 (1121): : 162 - &