EPITAXIAL GROWTH OF SILICON BY HYDROGEN REDUCTION OF SIHCL3 ONTO SILICON SUBSTRATES

被引：44

作者：

CHARIG, JM

JOYCE, BA

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1962年 / 109卷 / 10期

关键词：

D O I：

10.1149/1.2425212

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：957 / 962

页数：6

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