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A PULSE STAINING METHOD FOR DELINEATING N-N+ AND P-P+ JUNCTIONS IN SILICON

被引：4
作者：
JOYCE, BA
机构：
来源：
SOLID-STATE ELECTRONICS | 1962年 / 5卷 / MAR-A期
关键词：
D O I：
10.1016/0038-1101(62)90024-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：102 / &
相关论文
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