A PULSE STAINING METHOD FOR DELINEATING N-N+ AND P-P+ JUNCTIONS IN SILICON

被引:4
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JOYCE, BA
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10.1016/0038-1101(62)90024-2
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码:102 / &
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