EXPERIMENTS ON THE INTERFACE BETWEEN GERMANIUM AND AN ELECTROLYTE

[1] THEORY OF RELATION BETWEEN HOLE CONCENTRATION AND CHARACTERISTICS OF GERMANIUM POINT CONTACTS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1950, 29 (04): : 469 - 495

[2] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[3] Becquerel E, 1839, CR HEBD ACAD SCI, V9, P561

[4] BRATTAIN WH, 1954, PHYS REV, V94, P750

[5] BRATTAIN WH, 1953, AT&T TECH J, V32, P1

[6] BRATTAIN WH, 1951, SEMICONDUCTING MATER, P37

[7] GARRETT CGB, UNPUB

[8] GLASSTONE, 1942, INTRO ELECTROCHEMIST, pCH13

[9] GUGGENHEIM EA, 1949, THERMODYNAMICS, pCH10

[10] TEMPORARY TRAPS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1953, 90 (01): : 152 - 153

[1] THEORY OF RELATION BETWEEN HOLE CONCENTRATION AND CHARACTERISTICS OF GERMANIUM POINT CONTACTS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1950, 29 (04): : 469 - 495

[2] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727

[3] Becquerel E, 1839, CR HEBD ACAD SCI, V9, P561

[4] BRATTAIN WH, 1954, PHYS REV, V94, P750

[5] BRATTAIN WH, 1953, AT&T TECH J, V32, P1

[6] BRATTAIN WH, 1951, SEMICONDUCTING MATER, P37

[7] GARRETT CGB, UNPUB

[8] GLASSTONE, 1942, INTRO ELECTROCHEMIST, pCH13

[9] GUGGENHEIM EA, 1949, THERMODYNAMICS, pCH10

[10] TEMPORARY TRAPS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1953, 90 (01): : 152 - 153