ELECTROLYTIC SHAPING OF GERMANIUM AND SILICON

被引:936
作者
UHLIR, A
机构
来源
BELL SYSTEM TECHNICAL JOURNAL | 1956年 / 35卷 / 02期
关键词
D O I
10.1002/j.1538-7305.1956.tb02385.x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:333 / 347
页数:15
相关论文
共 16 条
[1]  
BAILEY WE, 1922, Patent No. 1416929
[2]  
BARRY JF, 1955, JUN IRE AIEE SEM DEV
[3]   RECTIFICATION PROPERTIES OF METAL SEMICONDUCTOR CONTACTS [J].
BORNEMAN, EH ;
SCHWARZ, RF ;
STICKLER, JJ .
JOURNAL OF APPLIED PHYSICS, 1955, 26 (08) :1021-1028
[4]  
BRADLEY, 1953, P IRE, V24, P1702
[5]   EXPERIMENTS ON THE INTERFACE BETWEEN GERMANIUM AND AN ELECTROLYTE [J].
BRATTAIN, WH ;
GARRETT, CGB .
BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (01) :129-176
[6]  
BUCK TM, 1955, MAY CINC M EL SOC
[7]   ELECTROLYTIC ETCHING AT SMALL-ANGLE GRAIN BOUNDARIES IN GERMANIUM [J].
ELLIS, SG .
PHYSICAL REVIEW, 1955, 100 (04) :1140-1141
[8]  
HEIDENREICH RD, 1952, Patent No. 2619414
[9]   UBER DIE ANODISCHE AUFLOSUNG DES GERMANIUMS [J].
JIRSA, F .
ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1952, 268 (1-2) :84-88
[10]   AVALANCHE BREAKDOWN IN GERMANIUM [J].
MILLER, SL .
PHYSICAL REVIEW, 1955, 99 (04) :1234-1241