REGROWTH KINETICS OF AMORPHOUS-GE LAYERS CREATED BY GE-74 AND SI-28 IMPLANTATION OF GE CRYSTALS

[1] Barna A., 1972, J NONCRYSTALL SOLIDS, V8-10, P36, DOI DOI 10.1016/0022-3093(72)90114-7

[2] ANNEALING AND CRYSTALLIZATION OF AMORPHOUS-GERMANIUM THIN-FILMS [J]. THIN SOLID FILMS, 1976, 35 (01) : 45 - 56

[3] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[4] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158

[5] KENDALL DK, 1969, SEMICONDUCTOR SILICO, P410

[6] MATARE HF, 1971, DEFECTS ELECT SEMICO, P98

[7] Paul W., 1973, ADV PHYS, V22, P529

[8] [No title captured]

[1] Barna A., 1972, J NONCRYSTALL SOLIDS, V8-10, P36, DOI DOI 10.1016/0022-3093(72)90114-7

[2] ANNEALING AND CRYSTALLIZATION OF AMORPHOUS-GERMANIUM THIN-FILMS [J]. THIN SOLID FILMS, 1976, 35 (01) : 45 - 56

[3] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[4] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158

[5] KENDALL DK, 1969, SEMICONDUCTOR SILICO, P410

[6] MATARE HF, 1971, DEFECTS ELECT SEMICO, P98

[7] Paul W., 1973, ADV PHYS, V22, P529

[8] [No title captured]