INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS

[1] BRICE DK, 1975, ION IMPLANTATION RAN

[2] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240

[3] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[4] GIBBONS JF, 1975, PROJECTED RANGE STAT

[5] KENNEDY EF, 1976, P INT C ION IMPLANTA

[6] MICROSTRUCTURE OF XENON-IMPLANTED SILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 501 - 503

[7] Maissel LI, 1970, HDB THIN FILM TECHNO, P10

[8] SIGMON TW, UNPUBLISHED

[9] SIGMON TW, 1975, P INT C ION IMPLANTA, P633

[10] Ziegler J. F., 1974, Atomic Data and Nuclear Data Tables, V13, P463, DOI 10.1016/0092-640X(74)90009-6

[1] BRICE DK, 1975, ION IMPLANTATION RAN

[2] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240

[3] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[4] GIBBONS JF, 1975, PROJECTED RANGE STAT

[5] KENNEDY EF, 1976, P INT C ION IMPLANTA

[6] MICROSTRUCTURE OF XENON-IMPLANTED SILICON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (01): : 501 - 503

[7] Maissel LI, 1970, HDB THIN FILM TECHNO, P10

[8] SIGMON TW, UNPUBLISHED

[9] SIGMON TW, 1975, P INT C ION IMPLANTA, P633

[10] Ziegler J. F., 1974, Atomic Data and Nuclear Data Tables, V13, P463, DOI 10.1016/0092-640X(74)90009-6