MICROSTRUCTURE OF XENON-IMPLANTED SILICON

被引：16

作者：

MADER, S ^{[1
]}

TU, KN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1975年 / 12卷 / 01期

关键词：

D O I：

10.1116/1.568572

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：501 / 503

页数：3

共 6 条

[1] IDENTIFICATION OF DOMINANT DIFFUSING SPECIES IN SILICIDE FORMATION
CHU, WK
KRAUTLE, H
MAYER, JW
MULLER, H
NICOLET, MA
TU, KN
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (08) : 454 - 457
[2] Hu S. M., 1973, ATOMIC DIFFUSION SEM, P217
[3] ANALYSIS OF THIN-FILM STRUCTURES WITH NUCLEAR BACKSCATTERING AND X-RAY-DIFFRACTION
MAYER, JW
TU, KN
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (01): : 86 - 93
[4] MAYER JW, 1970, ION IMPLANTATION SEM, pCH2
[5] RUHLE MR, 1972, RADIATION INDUCED VO, P255
[6] FORMATION AND ANNEALING OF ISOLATION REGIONS IN SILICON THROUGH SI+ BOMBARDMENT
SCHWUTTK.GH
BRACK, K
GOREY, EF
KAHAN, A
LOWE, LF
EULER, F
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (01): : 107 - 113