IDENTIFICATION OF DOMINANT DIFFUSING SPECIES IN SILICIDE FORMATION

[1] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1972, 20 (09) : 359 - &

[2] USE OF RUTHERFORD BACKSCATTERING TO STUDY BEHAVIOR OF ION-IMPLANTED ATOMS DURING ANODIC-OXIDATION OF ALUMINUM - AR, KR, XE, K, RB, CS, CL, BR, AND I [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (08) : 1096 - 1102

[3] CHU WK, 1974, B AM PHYS SOC, V19, P273

[4] HUCHINS GA, 1973, THIN SOLID FILMS, V18, P343

[5] ANALYSIS OF FORMATION OF HAFNIUM SILICIDE ON SILICON [J]. APPLIED PHYSICS LETTERS, 1973, 22 (02) : 81 - 83

[6] Kirkendall EO, 1942, T AM I MIN MET ENG, V147, P104

[7] ANALYSIS OF THIN-FILM STRUCTURES WITH NUCLEAR BACKSCATTERING AND X-RAY-DIFFRACTION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (01): : 86 - 93

[8] KINETICS AND MECHANISM OF PLATINUM SILICIDE FORMATION ON SILICON [J]. APPLIED PHYSICS LETTERS, 1974, 24 (08) : 391 - 393

[9] FORMATION OF VANADIUM SILICIDES BY INTERACTIONS OF V WITH BARE AND OXIDIZED SI WAFERS [J]. APPLIED PHYSICS LETTERS, 1973, 23 (09) : 493 - 495

[10] TU KN, TO BE PUBLISHED

[1] GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J]. APPLIED PHYSICS LETTERS, 1972, 20 (09) : 359 - &

[2] USE OF RUTHERFORD BACKSCATTERING TO STUDY BEHAVIOR OF ION-IMPLANTED ATOMS DURING ANODIC-OXIDATION OF ALUMINUM - AR, KR, XE, K, RB, CS, CL, BR, AND I [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (08) : 1096 - 1102

[3] CHU WK, 1974, B AM PHYS SOC, V19, P273

[4] HUCHINS GA, 1973, THIN SOLID FILMS, V18, P343

[5] ANALYSIS OF FORMATION OF HAFNIUM SILICIDE ON SILICON [J]. APPLIED PHYSICS LETTERS, 1973, 22 (02) : 81 - 83

[6] Kirkendall EO, 1942, T AM I MIN MET ENG, V147, P104

[7] ANALYSIS OF THIN-FILM STRUCTURES WITH NUCLEAR BACKSCATTERING AND X-RAY-DIFFRACTION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (01): : 86 - 93

[8] KINETICS AND MECHANISM OF PLATINUM SILICIDE FORMATION ON SILICON [J]. APPLIED PHYSICS LETTERS, 1974, 24 (08) : 391 - 393

[9] FORMATION OF VANADIUM SILICIDES BY INTERACTIONS OF V WITH BARE AND OXIDIZED SI WAFERS [J]. APPLIED PHYSICS LETTERS, 1973, 23 (09) : 493 - 495

[10] TU KN, TO BE PUBLISHED