ANALYSIS OF FORMATION OF HAFNIUM SILICIDE ON SILICON

被引：34

作者：

KIRCHER, CJ ^{[1
]}

MAYER, JW ^{[1
]}

TU, KN ^{[1
]}

ZIEGLER, JF ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HEIGHTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1973年 / 22卷 / 02期

关键词：

D O I：

10.1063/1.1654565

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：81 / 83

页数：3

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