KINETICS AND MECHANISM OF PLATINUM SILICIDE FORMATION ON SILICON

被引:160
作者
POATE, JM [1 ]
TISONE, TC [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1063/1.1655230
中图分类号
O59 [应用物理学];
学科分类号
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页码:391 / 393
页数:3
相关论文
共 15 条
[1]  
AXELROD NN, UNPUBLISHED
[2]  
BINDELL JB, UNPUBLISHED
[3]   PRINCIPLES AND APPLICATIONS OF ION-BEAM TECHNIQUES FOR ANALYSIS OF SOLIDS AND THIN-FILMS [J].
CHU, WK ;
MAYER, JW ;
NICOLET, MA ;
BUCK, TM ;
AMSEL, G ;
EISEN, F .
THIN SOLID FILMS, 1973, 17 (01) :1-41
[4]   INTERDIFFUSION AND COMPOUND FORMATION IN THIN FILMS OF PD OR PT ON SI SINGLE CRYSTALS [J].
DROBEK, J ;
SUN, RC ;
TISONE, TC .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 8 (01) :243-+
[5]   LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUM [J].
HIRAKI, A ;
NICOLET, MA ;
MAYER, JW .
APPLIED PHYSICS LETTERS, 1971, 18 (05) :178-&
[6]  
KAMOSHIDA M, 1970, NEC J RES DEVELOP, V16, P24
[7]  
LEPSELTER MP, 1969, OHMIC CONTACTS SEMIC
[8]   SOLID-SOLID REACTIONS IN PT-SI SYSTEMS [J].
MUTA, H ;
SHINODA, D .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) :2913-+
[9]  
Northcliffe L. S., 1970, NUCL DATA A, V7, P233
[10]  
RAND MH, PRIVATE COMMUNICATIO