FORMATION AND ANNEALING OF ISOLATION REGIONS IN SILICON THROUGH SI+ BOMBARDMENT

被引：9

作者：

SCHWUTTK.GH

BRACK, K

GOREY, EF

KAHAN, A

LOWE, LF

EULER, F

机构：

[1] IBM CORP,E FISHKILL LABS,HOPEWELL JCT,NY 12533

[2] USAF,CAMBRIDGE RES LAB,BEDFORD,MA 01730

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1972年 / 14卷 / 01期

关键词：

D O I：

10.1002/pssa.2210140111

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：107 / 113

页数：7

共 15 条

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[2] X-RAY INVESTIGATION OF LATTICE DEFORMATIONS IN SILICON INDUCED THROUGH HIGH-ENERGY ION IMPLANTATION
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HART, M
SCHWUTTKE, GH
[J]. PHYSICA STATUS SOLIDI, 1969, 33 (01): : 361 - +
[3] BULGAKOV YV, 1967, SOV PHYS SEMICOND+, V1, P346
[4] ISOLATION OF JUNCTION DEVICES IN GAAS USING PROTON BOMBARDMENT
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LINDLEY, WT
WOLFE, CM
DONNELLY, JP
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (04) : 209 - &
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[10] RUMSH MA, 1965, B LENINGRAD U, P52